Silicon wafer and method for producing the same

摘要

A silicon wafer is produced through the steps of forming a silicon ingot by a CZ method with an interstitial oxygen concentration of not more than 7.0x10 17 atoms/cm 3 , slicing a wafer from the silicon ingot after doping the silicon ingot with phosphorus, forming a polysilicon layer or a strained layer on one main surface of the wafer, mirror polishing the other main surface of the wafer, and performing a heat treatment for the wafer in a non-oxidizing atmosphere.