发明名称 |
SEMICONDUCTOR MEMORY CELL AND MEMORY ARRAY USING A BREAKDOWN PHENOMENA IN AN ULTRA-THIN DIELECTRIC |
摘要 |
<p>A programming circuit includes a wordline decoder, an adjustable voltage generator, and a column transistor. The programming circuit is useful in programming a memory cell comprised of a select transistor and a data storage element. The data storage element is programmed by a programming current. The amount of the programming current can be modulated by the column transistor, the select transistor, or the adjustable voltage generator.</p> |
申请公布号 |
EP1436815(B1) |
申请公布日期 |
2010.03.03 |
申请号 |
EP20020759714 |
申请日期 |
2002.09.17 |
申请人 |
KILOPASS TECHNOLOGY, INC. |
发明人 |
PENG, JACK ZEZHONG |
分类号 |
G11C17/08;G11C17/16;G11C11/56;G11C29/50;H01L21/8246;H01L23/525;H01L27/10;H01L27/112 |
主分类号 |
G11C17/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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