| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to simplify a manufacturing process by forming a metal silicon layer and a semiconductor layer on the surface of a heating element. CONSTITUTION: Upper and lower rubber bands(21,22) are attached to the upper and lower sides of the surface of a heating element(2a). A corrosion surface is formed on the surface of the heating element between the upper and lower rubber bands. A metal silicon layer(3) is formed on the corrosion surface. A semiconductor layer(4) is formed on the metal silicon layer. The metal silicon layer and the semiconductor layer include the silver powder. The upper and lower rubber bands are removed from the heating element. The heating element is heated at the temperature of 900 to 1400 degrees centigrade. The upper and lower copper bands are attached to the upper and lower sides of the semiconductor layer. |
