| 摘要 |
[Problem] To provide, as a metallized aluminum substrate for mounting a semiconductor device such as LD or LED, a metallized aluminum nitride substrate having excellent dimensional accuracy and high bonding strength of a wiring pattern. [Means for solving problems] First, an intermediate material substrate comprising a sintered aluminum nitride substrate having on its surface a wiring pattern constituted of a conductor layer composed of a composition containing at least high-melting point metal powder, aluminum nitride powder and a sintering auxiliary agent for aluminum nitride is prepared. Then, firing of the intermediate material substrate is carried out while sintered aluminum nitride obtained by sintering using a sintering auxiliary agent of the same kind as that of the sintering auxiliary agent contained in the composition is placed so as to be brought into contact with the conductor layer on the surface of the intermediate material substrate or so as to be present in the vicinity of the conductor layer. |
