| 摘要 |
PURPOSE: A method for fabricating fine pattern having irregular width is provided to improve operation property and production yield by adjusting the width of a gate pattern. CONSTITUTION: A gate line is formed through an exposure process. The line width of the gate pattern is changed. The exposure process uses the mask. The mask defines a main pattern and an assistant pattern. The main pattern has a line-shape with a specific width. The assistant pattern has a dot form. A wide part of a line width in the gate pattern is located on an active region(602). The width of the gate pattern is located on surface of the element isolation film(604).
|
