| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can reconfigure the electrical characteristics. SOLUTION: The present invention is related to a reconfigurable semiconductor device. The semiconductor device includes a substrate; a first insulating material formed on the substrate; two channels with different polarities, many terminal electrodes that are formed on the insulating material and are coupled in common with both channels at opposite ends; a second insulating material formed on the terminal electrodes; and at least one control gate formed on the second insulating material. The channels have different polarities, and a charge storage layer is formed on the second insulation material. Forward bias or reverse bias is applied to the control gate, and then the bias is cut off. The voltage-current characteristics of the semiconductor device are changed, in accordance with the charge generated on the charge storage layer. COPYRIGHT: (C)2010,JPO&INPIT
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