发明名称 |
PROGRAMMABLE READ ONLY MEMORY |
摘要 |
PURPOSE: A programmable read only memory is provided to form a fuse cell array by connecting program terminals to program voltage terminals through stacked conductive layers. CONSTITUTION: A least two conductive layers are stacked. A first cell(206-A) includes a transistor(210-A) with at least a first terminal. The first terminal is connected conductively to the voltage supply terminal by a part of conductive layers. The first cell includes a fuse(208-A) connected conductively to a transistor. The fuse is selected from one or more metal and polysilicon.
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申请公布号 |
KR20100022935(A) |
申请公布日期 |
2010.03.03 |
申请号 |
KR20090076618 |
申请日期 |
2009.08.19 |
申请人 |
INTEL CORP. |
发明人 |
CHEN ZHANPING;KULKARNI SARVESH;ZHANG KEVIN |
分类号 |
G11C17/00;G11C17/10;G11C17/16 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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