发明名称 PROGRAMMABLE READ ONLY MEMORY
摘要 PURPOSE: A programmable read only memory is provided to form a fuse cell array by connecting program terminals to program voltage terminals through stacked conductive layers. CONSTITUTION: A least two conductive layers are stacked. A first cell(206-A) includes a transistor(210-A) with at least a first terminal. The first terminal is connected conductively to the voltage supply terminal by a part of conductive layers. The first cell includes a fuse(208-A) connected conductively to a transistor. The fuse is selected from one or more metal and polysilicon.
申请公布号 KR20100022935(A) 申请公布日期 2010.03.03
申请号 KR20090076618 申请日期 2009.08.19
申请人 INTEL CORP. 发明人 CHEN ZHANPING;KULKARNI SARVESH;ZHANG KEVIN
分类号 G11C17/00;G11C17/10;G11C17/16 主分类号 G11C17/00
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