NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A nitride semiconductor substrate and a manufacturing method thereof are provided to manufacture a excellent nitride semiconductor substrate by shielding an electric wave with a mask layer and a sphere ball. CONSTITUTION: In a nitride semiconductor substrate and a manufacturing method thereof, a mask layer(30) grows on a material substrate(10). The mask layer has an irregular cluster type. The mask layer shields the electric potential electric wave. The nitride semiconductor layer is formed on the substrate. The mask layer is comprised of siN and mgN or ZnN.