发明名称 Method for fabricating polysilicon film
摘要 A method of fabricating a polysilicon film includes: forming a seed layer on a surface of a substrate; forming a silicon layer over the surface of the seed layer; and performing a laser annealing process to transform the silicon layer into a polysilicon layer at a laser energy equal to or greater than that needed to cause complete melting of the silicon layer.
申请公布号 US7670886(B2) 申请公布日期 2010.03.02
申请号 US20060472858 申请日期 2006.06.22
申请人 发明人 KAKKAD RAMESH
分类号 H01L21/00 主分类号 H01L21/00
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