发明名称 |
MOS structures with contact projections for lower contact resistance and methods for fabricating the same |
摘要 |
MOS structures with contact projections for lower contact resistance and methods for fabricating such MOS structures have been provided. In an embodiment, a method comprises providing a semiconductor substrate, fabricating a gate stack on the substrate, and forming a contact projection on the substrate. Ions of a conductivity-determining type are implanted within the substrate using the gate stack as an ion implantation mask to form impurity-doped regions within the substrate. A metal silicide layer is formed on the contact projection and a contact is formed to the metal silicide layer. The contact is in electrical communication with the impurity-doped regions via the contact projection.
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申请公布号 |
US7670932(B2) |
申请公布日期 |
2010.03.02 |
申请号 |
US20070762133 |
申请日期 |
2007.06.13 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
ZHU JIANHONG;HAUSE FRED;WU DAVID |
分类号 |
C12N15/75 |
主分类号 |
C12N15/75 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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