发明名称 Plasma processing apparatus
摘要 In a microwave plasma processing apparatus, the reflection of microwave by the joint unit between the microwave supplying waveguide and the microwave antenna is reduced by providing a taper surface or a member having a medium permittivity between the microwave supplying waveguide and the microwave antenna so as to moderate an impedance change. Accordingly, the efficiency of power supplying is improved, and reduced discharge ensures stable formation of plasma.
申请公布号 US7670454(B2) 申请公布日期 2010.03.02
申请号 US20060337026 申请日期 2006.01.23
申请人 TOKYO ELECTRON LIMITED 发明人 OHMI TADAHIRO;HIRAYAMA MASAKI;SUGAWA SHIGETOSHI;GOTO TETSUYA
分类号 H01L21/306;H05H1/46;C23C16/00;H01J37/32;H01L21/302;H01L21/3065;H01L21/31 主分类号 H01L21/306
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