发明名称 Embedded trench capacitor having a high-k node dielectric and a metallic inner electrode
摘要 A deep trench is formed in a semiconductor substrate and a pad layer thereupon, and filled with a dummy node dielectric and a dummy trench fill. A shallow trench isolation structure is formed in the semiconductor substrate. A dummy gate structure is formed in a device region after removal of the pad layer. A first dielectric layer is formed over the dummy gate structure and a protruding portion of the dummy trench fill and then planarized. The dummy structures are removed. The deep trench and a cavity formed by removal of the dummy gate structure are filled with a high dielectric constant material layer and a metallic layer, which form a high-k node dielectric and a metallic inner electrode of a deep trench capacitor in the deep trench and a high-k gate dielectric and a metal gate in the device region.
申请公布号 US7671394(B2) 申请公布日期 2010.03.02
申请号 US20070873728 申请日期 2007.10.17
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 BOOTH, JR. ROGER A.;BRODSKY MARYJANE;CHENG KANGGUO;PEI CHENGWEN
分类号 H01L21/8242 主分类号 H01L21/8242
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