发明名称 |
Embedded trench capacitor having a high-k node dielectric and a metallic inner electrode |
摘要 |
A deep trench is formed in a semiconductor substrate and a pad layer thereupon, and filled with a dummy node dielectric and a dummy trench fill. A shallow trench isolation structure is formed in the semiconductor substrate. A dummy gate structure is formed in a device region after removal of the pad layer. A first dielectric layer is formed over the dummy gate structure and a protruding portion of the dummy trench fill and then planarized. The dummy structures are removed. The deep trench and a cavity formed by removal of the dummy gate structure are filled with a high dielectric constant material layer and a metallic layer, which form a high-k node dielectric and a metallic inner electrode of a deep trench capacitor in the deep trench and a high-k gate dielectric and a metal gate in the device region.
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申请公布号 |
US7671394(B2) |
申请公布日期 |
2010.03.02 |
申请号 |
US20070873728 |
申请日期 |
2007.10.17 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BOOTH, JR. ROGER A.;BRODSKY MARYJANE;CHENG KANGGUO;PEI CHENGWEN |
分类号 |
H01L21/8242 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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