发明名称 |
Time-of-light flight type distance sensor |
摘要 |
A lower cost range-finding image sensor based upon measurement of reflection time of light with reduced fabrication processes compared to standard CMOS manufacturing procedures. An oxide film is formed on a silicon substrate, and two photo-gate electrodes for charge-transfer are provided on the oxide film. Floating diffusion layers for taking charges out from a photodetector layer are provided at the ends of the oxide film, and on the outside thereof are provided a gate electrode for resetting and a diffusion layer for providing a reset voltage.
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申请公布号 |
US7671391(B2) |
申请公布日期 |
2010.03.02 |
申请号 |
US20050589722 |
申请日期 |
2005.02.14 |
申请人 |
NATIONAL UNIVERSITY CORPORATION SHIZUOKA UNIVERSITY |
发明人 |
KAWAHITO SHOJI |
分类号 |
G01C3/06;H01L31/062;G01S7/481;G01S17/10;G01S17/89;H01L27/14;H01L27/146;H01L31/02;H04N3/15;H04N5/335;H04N13/00 |
主分类号 |
G01C3/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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