发明名称 |
Semiconductor device made by using a laser anneal to incorporate stress into a channel region |
摘要 |
In one aspect there is provided a method of manufacturing a semiconductor device comprising forming gate electrodes over a semiconductor substrate, forming source/drains adjacent the gate electrodes, depositing a stress inducing layer over the gate electrodes. A laser anneal is conducted on at least the gate electrodes subsequent to depositing the stress inducing layer at a temperature of at least about 1100° C. for a period of time of at least about 300 microseconds, and the semiconductor device is subjected to a thermal anneal subsequent to conducting the laser anneal.
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申请公布号 |
US7670917(B2) |
申请公布日期 |
2010.03.02 |
申请号 |
US20070853328 |
申请日期 |
2007.09.11 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
JAIN AMITABH;MEHROTRA MANOJ |
分类号 |
H01L21/336;H01L21/31;H01L21/469 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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