| 摘要 |
<p>PURPOSE: A non-volatile semiconductor memory device and a method of manufacturing thereof are provided to maintain stored data even in case of power interruption by using a material for changing resistance. CONSTITUTION: A nonvolatile semiconductor memory device comprises a substrate, a semiconductor pillar, a hard mask(120), a gate electrode(140), a source electrode(150), a drain electrode(160), a resistance alteration material layer(170), and a metal layer(180). The semiconductor pillar is formed on the substrate. The hard mask is formed on the semiconductor pillar. The gate electrode is formed at the both sides of the semiconductor pillar. The source electrode and the drain electrode are formed in both sides of the semiconductor pillar. The resistance alteration material layer surrounds the around the mark. The resistance of the resistance alteration material changes according to an electric signal. The metal layer is formed on the resistance alteration material layer.</p> |
