发明名称 Semiconductor memory device with two-stage input buffer
摘要 A semiconductor memory device includes: a pre-amplifying unit configured to amplify a difference between an input signal and a reference signal to output a pre-output signal; a delaying unit configured to delay the input signal to output a delayed input signal; and a main amplifying unit configured to receive the pre-output signal and the delayed input signal as differential inputs to output an output signal.
申请公布号 US7672183(B2) 申请公布日期 2010.03.02
申请号 US20070000230 申请日期 2007.12.11
申请人 HYNIX SEMICONDUCTOR, INC. 发明人 JOO YONG-SUK;CHOI BYOUNG-JIN
分类号 G11C7/02 主分类号 G11C7/02
代理机构 代理人
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