发明名称 |
Semiconductor memory device with two-stage input buffer |
摘要 |
A semiconductor memory device includes: a pre-amplifying unit configured to amplify a difference between an input signal and a reference signal to output a pre-output signal; a delaying unit configured to delay the input signal to output a delayed input signal; and a main amplifying unit configured to receive the pre-output signal and the delayed input signal as differential inputs to output an output signal.
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申请公布号 |
US7672183(B2) |
申请公布日期 |
2010.03.02 |
申请号 |
US20070000230 |
申请日期 |
2007.12.11 |
申请人 |
HYNIX SEMICONDUCTOR, INC. |
发明人 |
JOO YONG-SUK;CHOI BYOUNG-JIN |
分类号 |
G11C7/02 |
主分类号 |
G11C7/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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