| 摘要 |
This invention provides an insulating film for a semiconductor device, which has low permittivity, low leak current, and high mechanical strength properties, undergoes no significant change in these properties with the elapse of time, and has water resistance, and an apparatus for producing the insulating film, and a process for producing a semiconductor device using the insulating film for a semiconductor device. The production process comprises a film forming step of supplying a mixed starting material gas, composed of a carrier gas and a starting material gas produced by gasifying a material having a borazine skeleton-type molecule, into a chamber, bringing the mixed gas to a plasma state, applying a bias to a substrate mounted within the chamber, and conducting gas phase polymerization using the borazine skeleton-type molecule as a fundamental unit to form an insulating film for a semiconductor device onto the substrate mounted within the chamber, and a reaction promoting step of, after the film forming step, bringing the magnitude of the bias applied to the substrate to a magnitude different from the bias in the film forming step, supplying only the starting material gas produced by gasifying the material having a borazine skeleton-type molecule while gradually reducing the amount of the gas, and treating the film with a plasma composed mainly of the carrier gas.
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