发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
In a semiconductor device, pining regions 105 are disposed along the junction portion of a drain region 102 and a channel forming region 106 locally in a channel width direction. With this structure, because the spread of a depletion layer from a drain side is restrained by the pining regions 105, a short-channel effect can be restrained effectively. Also, because a passage through which carriers move is ensured, high mobility can be maintained.
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申请公布号 |
US7671425(B2) |
申请公布日期 |
2010.03.02 |
申请号 |
US20030667899 |
申请日期 |
2003.09.23 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
MIYANAGA AKIHARU;KUBO NOBUO |
分类号 |
H01L29/76;H01L29/78;H01L21/265;H01L21/266;H01L21/8234;H01L21/8238;H01L27/088;H01L29/10 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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