| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to prevent a hillock type defect in a metal interconnection by forming a hardmask having a tensile stress property. CONSTITUTION: A semiconductor device comprises a metal wiring(122A), a hard mask(123A), and an insulating layer. The hard mask is formed on the metal wiring. The hard mask has the tensile stress. An insulating layer is formed on the hard mask. The metal wiring is formed with an aluminium film. The hard mask is formed with one among SiON, SiN and SiC. The barrier(121A) is formed in the lower part of the metal wiring.
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