发明名称 Lithographic apparatus and device manufacturing method
摘要 A method for correcting an exposure parameter of an immersion lithographic apparatus is provided. In the method, an exposure parameter is measured using a measuring beam projected through a liquid between the projection system and a substrate table of the immersion lithographic apparatus and offset is determined based on a change of a physical property impacting a measurement made using the measuring beam to at least partly correct the measured exposure parameter. Also, there is provided an apparatus and method to measure a height of an optical element connected to liquid between the projection system and the substrate table in the immersion lithographic apparatus.
申请公布号 US7670730(B2) 申请公布日期 2010.03.02
申请号 US20050298942 申请日期 2005.12.12
申请人 ASML NETHERLANDS B.V. 发明人 STREEFKERK BOB;BASELMANS JOHANNES JACOBUS MATHEUS;DONDERS SJOERD NICOLAAS LAMBERTUS;MERTENS JEROEN JOHANNES SOPHIA;MULKENS JOHANNES CATHARINUS HUBERTUS;HOOGENDAM CHRISTIAAN ALEXANDER
分类号 G03C5/00;G03F9/00 主分类号 G03C5/00
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