发明名称 |
Flash memory device and program method thereof |
摘要 |
A method for programming a flash memory device with a plurality of memory cells. A selected memory cell is programmed under a condition where a bulk area is biased with a high voltage. A program pass/fail of the memory cell is verified with the high voltage applied to the bulk area.
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申请公布号 |
US7672170(B2) |
申请公布日期 |
2010.03.02 |
申请号 |
US20070769429 |
申请日期 |
2007.06.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
LEE BYEONG-HOON;KIM SUN-KWON |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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地址 |
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