发明名称 Semiconductor display device
摘要 It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching to expose an active layer of the TFT.
申请公布号 US7671369(B2) 申请公布日期 2010.03.02
申请号 US20030400427 申请日期 2003.03.28
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;MURAKAMI SATOSHI;HAYAKAWA MASAHIKO;KATO KIYOSHI;OSAME MITSUAKI
分类号 G02F1/1333;H01L29/04;G02F1/1362;G02F1/1368;G09F9/30;H01L21/77;H01L21/84;H01L27/12;H01L27/13;H01L27/32;H01L29/786;H01L51/50;H01L51/52 主分类号 G02F1/1333
代理机构 代理人
主权项
地址