| 摘要 |
PURPOSE: A reading method and an operating method of a non-volatile memory device is provided to prevent a reading failure by setting different reading voltages, considering an elapsed period between program operation and reading operation. CONSTITUTION: Dummy cells in which a program operation is performed after an n-th erase operation is read based on a first reading voltage(530). The number of the dummy cells with a lower threshold voltage than the first reading voltage is counted(540). If the counted dummy cells are more than a critical value, the reading voltage is reset(560). Memory cells are included in the same memory cell block as dummy cells. The reading operation is performed based on the reset reading voltage(570).
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