发明名称 |
Vertical drain extended MOSFET transistor with vertical trench field plate |
摘要 |
A vertical drain extended metal-oxide semiconductor field effect (MOSFET) transistor or a vertical double diffused metal-oxide semiconductor (VDMOS) transistor includes: a buried layer having a first conductivity type in a semiconductor backgate having a second conductivity type; an epitaxial (EPI) layer having the first conductivity type and formed above the buried layer; a deep well having the first conductivity type in the EPI layer extending down to the buried layer; at least one shallow well having the second conductivity type in the EPI layer; a shallow implant region having the first conductivity type and formed in the shallow well; a gate electrode having a lateral component extending over an edge of the shallow well and stopping at some spacing from an edge of the shallow implant and having a vertical trench field plate extending vertically into the EPI layer.
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申请公布号 |
US7671408(B2) |
申请公布日期 |
2010.03.02 |
申请号 |
US20080169967 |
申请日期 |
2008.07.09 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
DENISON MARIE |
分类号 |
H01L29/76;H01L29/94 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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