发明名称 Solid-state imaging devices
摘要 A solid-state imaging device includes: a substrate; a photoelectric transducer that is provided within the substrate and generates light-generated charge in accordance with incident light; a floating diffusion that retains the light-generated charge generated from the photoelectric transducer; a transfer and retention unit that is provided between the photoelectric transducer and the floating diffusion for a purpose of controlling a transfer of the light-generated charge and has a charge-retaining region that can retain the light-generated charge generated from the photoelectric transducer; a reset unit that initializes a potential of the floating diffusion; an amplifying transistor that generates an output based on a potential of the floating diffusion; a selection transistor that selectively outputs an output of the amplifying transistor; and an excessive charge-discharging unit that discharges excessive electric charge generated from the photoelectric transducer.
申请公布号 US7671402(B2) 申请公布日期 2010.03.02
申请号 US20080069052 申请日期 2008.02.07
申请人 SEIKO EPSON CORPORATION 发明人 KUWAZAWA KAZUNOBU
分类号 H01L29/788;H01L27/146;H04N5/335;H04N5/372;H04N5/374 主分类号 H01L29/788
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