| 摘要 |
PURPOSE: A non volatile memory device and an operating method thereof are provided to reduce the bouncing effect of a source line using a common source line voltage generator applying a control voltage which drops per step to a common source line. CONSTITUTION: A memory cell array(100) comprises a string to which a plurality of memory cells are serially connected. A common source voltage generator(200) outputs the source voltage to the source line connected to the string. The source voltage is lower than the voltage of a bit line of the string, and gradually drops to the ground voltage. A memory cell is serially connected between a bit line(BL) and the common source line. The voltage of the bit line is 1V. The source voltage starting from the voltage of 0.9V drops to the ground potential. |
