| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent erosion by forming a dummy pattern between the contact plugs. CONSTITUTION: A first interlayer insulation layer(450) is formed on a substrate(400). A trench for a contact plug and the trench for a dummy pattern are formed by etching the first interlayer insulation layer. A conductive layer is formed on the substrate with the trench for the contact plug and the trench for the dummy pattern. A contact plug(460A) and a dummy pattern(460B) are formed using a first planarization process until the first interlayer insulation layer is exposed on the substrate with the conductive layer. A second planarization process is performed on the substrate with the contact plug and the dummy pattern.
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