| 摘要 |
<p>PURPOSE: A nonvolatile semiconductor memory device is provided to prevent the increase of lithography processes by comprising a three dimensional stack memory with the 1-mask patterning. CONSTITUTION: A nonvolatile semiconductor memory device(1) includes a stack body(ML), a semiconductor pillar, a charge storage layer, and a gap. A plurality of insulation layers and electrode layers(WL) are alternatively stacked on the stack body. A through hole is extended to the stack direction on the stack body. A semiconductor pillar is filled in the through hole. The charge storage layer is formed between the electrode layer and the semiconductor pillar. The gap is formed between the electrode layers and is connected to the through hole.</p> |
