发明名称 |
INTEGRATED CIRCUIT SYSTEM INCLUDING NITRIDE LAYER TECHNOLOGY |
摘要 |
<p>An integrated circuit system including loading a wafer into a processing chamber and pre-purging the processing chamber with a first ammonia gas. Depositing a first nitride layer over the wafer and purging the processing chamber with a second ammonia gas. Depositing a second nitride layer over the first nitride layer that is misaligned with the first nitride layer. Post- purging the processing chamber with a third ammonia gas and purging the processing chamber with a nitrogen gas.</p> |
申请公布号 |
SG158849(A1) |
申请公布日期 |
2010.02.26 |
申请号 |
SG20100000040 |
申请日期 |
2007.07.04 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD |
发明人 |
NAGARAD SRIPAD SHESHAGIRI;WENG KOH HWA;KYUN SOHN DONG;XIAOYU CHEN;LIM LOUIS;MUN JUNG SUNG;WAH YAP CHIEW;YELEHANKA PRADEEP RAMACHANDRAMURTHY;KAMAT NITIN |
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