| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a photomask, which can prevent the occurrence of positional deviation error of a drawing pattern due to electron beam in a mask manufacturing step and the deterioration in yield due to the occurrence of the positional deviation of the pattern when a circuit pattern is transferred to a semiconductor wafer by using a photomask deflected by distortion of a glass substrate of the photomask. <P>SOLUTION: In a manufacturing step of the photomask, a crack assembly area 17 comprising a crack 16 distribution is formed in the mask 6 by irradiation with a femto-second pulse laser, the flatness of the mask 6 is improved by a tensile stress operated thereto and, thereby, the precision of drawing position of the circuit pattern 5 and the yield of the semiconductor wafer on which the circuit pattern is formed can be improved. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
