| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a pattern forming method of a semiconductor element, which can simultaneously form patterns having a variety of widths, and can increase a pattern density in part of regions by double patterning technique. <P>SOLUTION: In this pattern forming method, a first mask pattern 320A is formed in a first region A by patterning a dual mask layer on a substrate 300, and a second mask pattern 320B which is wider than the first mask pattern 320A is formed in a second region B. A first spacer 350A for covering both sidewalls of the first mask pattern 320A and a second spacer 350B for covering both sidewalls of the second mask pattern 320B are simultaneously formed. After the first mask pattern 320A is removed, the substrate 300 is etched simultaneously in the first region A and second region B by using the first spacer 350A as an etching mask in the first region A, and by using the second mask pattern 320B and second spacer 350B as etching masks in the second region B. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
