发明名称 Semiconductor device and method of fabricating semiconductor device
摘要 There is provided a semiconductor device including a semiconductor substrate on which at least one electrode pad is formed, a rewiring layer connected to the electrode pad, and an encapsulation part which encapsulates the semiconductor substrate, the electrode pad being formed of a first region including a connection part connected to the rewiring layer and a second region other than the first region, the device including: an insulating film provided on the semiconductor substrate, having an opening at which the first region in the electrode pad is exposed, and covering the second region of the electrode pad, wherein the rewiring layer is connected to the first region of the electrode pad exposed at the opening, and extends across the insulating film so as to cover the second region of the electrode pad from above.
申请公布号 US2010044859(A1) 申请公布日期 2010.02.25
申请号 US20090461089 申请日期 2009.07.31
申请人 OKI SEMICONDUCTOR CO., LTD. 发明人 YAMAGUCHI TADASHI;NAGASAKI KENJI
分类号 H01L23/485;H01L23/28 主分类号 H01L23/485
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