| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device can improve a reverse surge voltage resistance. SOLUTION: The semiconductor device includes: a semiconductor layer 1 comprising a semiconductor material including a first conductive type impurity; a semiconductor layer 2 formed on the semiconductor 1 and comprising the semiconductor material including the first conductive type impurity having the concentration lower than that of the semiconductor layer 1; a semiconductor region 4 formed on the surface of the semiconductor layer 2 and comprising the semiconductor material including a second conductive type impurity; an electrode layer 6 formed on the semiconductor layer 2 and the semiconductor region 4; a semiconductor layer 3 formed in the inside of the semiconductor layer 1 or the semiconductor layer 2 so as to overlap only part of the electrode layer 6 by planar view from vertical direction to the surface of the semiconductor layer 2 and comprising the semiconductor material including the second conductive type impurity; and a semiconductor region 5 formed on the surface of the semiconductor region 4 under the electrode layer 6 and comprising the semiconductor material including the first conductive type impurity. COPYRIGHT: (C)2010,JPO&INPIT |
