| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device including a horizontal field effect transistor with high positioning accuracy by a simple procedure. Ž<P>SOLUTION: A high breakdown voltage transistor 128 includes a gate electrode 110 formed on a channel region 170, a first conduction type source region 116a and a drain region 116b respectively formed on both sides of the channel region 170, and a drift region 172 of a super junction structure provided between the source region 116a and the drain region 116b and disposed alternately with first conduction type impurity diffusion regions and second conduction type impurity diffusion regions respectively at certain widths along a gate width direction of the gate electrode 110. In a plan view, the gate electrode 110 has a configuration formed in a comb-like structure having comb teeth covering the second conduction type impurity diffusion region of the drift region 172. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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