THIN FILM TRANSISTOR PANEL AND METHOD OF MANUFACTURING THE SAME

摘要

After forming a signal line including aluminum, an upper layer of an oxide layer including aluminum that covers the signal line is formed in the same chamber and by using the same sputtering target as the signal line, or a buffer layer of an oxide layer including aluminum is formed in a contact hole exposing the signal line during the formation of the contact hole. Accordingly, the contact characteristic between an upper layer including indium tin oxide (“ITO”) or indium zinc oxide (“IZO”) and the signal line may be improved to enhance the adhesion therebetween while not increasing the production cost of the thin film transistor (“TFT”) array panel.