SEMICONDUCTOR PHOTORECEPTOR, OPTICAL COMMUNICATION DEVICE, OPTICAL INTERCONNECT MODULE, PHOTOELECTRIC CONVERSION METHOD

摘要

Provided is a semiconductor photoreceptor which has high speed, high efficiency, and little dependence on the polarization direction of the incident light. The semiconductor photoreceptor is comprised of a semiconductor layer including a light absorption layer (4); a metal-semiconductor-metal (MSM) electrode (1) which is positioned on the semiconductor layer, forms a Schottky junction with the semiconductor layer, and has a slit opening; a reflection prevention film (2) which is formed on the semiconductor layer and the MSM electrode (1); and a Bragg reflector multi-layered film (6) which is provided in the lower part of the semiconductor layer. The MSM electrode (1) has a period which can induce surface plasmon for transverse magnetic (TM) polarized incident light and a thickness which can obtain satisfactory transmittance of transverse electric (TE) polarized incident light.