发明名称 METHODS AND APPARATUS FOR A CHEMICAL VAPOR DEPOSITION REACTOR
摘要 Embodiments of the invention generally relate to a chemical vapor deposition system and related method of use. In one embodiment, the system includes a reactor lid assembly having a body, a track assembly having a body and a guide path located along the body, and a heating assembly operable to heat the substrate as the substrate moves along the guide path. The body of the lid assembly and the body of the track assembly are coupled together to form a gap that is configured to receive a substrate. In another embodiment, a method of forming layers on a substrate using the chemical vapor deposition system includes introducing the substrate into a guide path, depositing a first layer on the substrate and depositing a second layer on the substrate, while the substrate moves along the guide path; and preventing mixing of gases between the first deposition step and the second deposition step.
申请公布号 WO2009155119(A3) 申请公布日期 2010.02.25
申请号 WO2009US45709 申请日期 2009.05.29
申请人 ALTA DEVICES, INC.;HE, GANG;HIGASHI, GREGG;SORABJI, KHURSHED;HAMAMJY, ROGER;HEGEDUS, ANDREAS;ARCHER, MELISSA;ATWATER, HARRY;SONNENFELDT, STEWART 发明人 HE, GANG;HIGASHI, GREGG;SORABJI, KHURSHED;HAMAMJY, ROGER;HEGEDUS, ANDREAS;ARCHER, MELISSA;ATWATER, HARRY;SONNENFELDT, STEWART
分类号 H01L21/205 主分类号 H01L21/205
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