| 摘要 |
<p>Problem To provide a silicon wafer which can suppress both slip dislocation and occurrence of warpage in a device manufacturing process and a method for manufacturing the same. Solving Means In a silicon wafer including plate-shaped Bulk Micro Defects or BMDs, a density of BMDs whose diagonal lengths are in a range of 10nm to 120nm, of BMDs present at a deep position which is inwardly spaced from a surface of a silicon wafer by a distance of 50µm or more, is 1 × 10 11 /cm 3 or more, a density of BMDs whose diagonal lengths are 750nm or more, of BMDs present at a deep position which is inwardly spaced from a surface of a silicon wafer by a distance of 50µm or more is 1 × 10 7 /cm 3 or less, and an interstitial oxygen concentration is 5 × 10 17 atoms/cm 3 or less.</p> |
