| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve light extraction efficiency in a semiconductor light-emitting element. <P>SOLUTION: In the method of manufacturing an LED lamp, the light-emitting element having a substrate comprising sapphire (Al<SB>2</SB>O<SB>3</SB>), a semiconductor layer successively formed on the substrate and composed of Al<SB>x</SB>Ga<SB>y</SB>In<SB>1-x-y</SB>N (0≤x≤1, 0≤y≤1) including a light-emitting layer and an electrode formed on the semiconductor layer is sealed with a resin. In this case, a surface on which the semiconductor layer of the substrate is to be laminated is worked into a rugged shape having inclined side faces, and an angle θ to the substrate surface of the inclined side face is defined as 30°<θ<60°. Then, the light-emitting element is mounted in a flip-chip manner so that the electrode is at the bottom, and the light-emitting element is sealed with a silicone resin. <P>COPYRIGHT: (C)2010,JPO&INPIT |
