| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress carbon capturing, and to suppress surface morphology from being degraded. <P>SOLUTION: A semiconductor light-emitting device includes: a substrate; a first clad layer formed above the substrate and made of AlGaInP mixed crystal of a first conductivity type; an active layer formed on the first clad layer and made of AlGaInP mixed crystal; and a second clad layer formed on the active layer and made of AlGaInP mixed crystal of a second conductivity type opposite to the first conductivity type, wherein the first clad layer and the second clad layer each have a band gap wider than a band gap of the active layer, and at least one of the active layer and the first and second clad layers is doped with As at an impurity concentration level not changing the band gap. <P>COPYRIGHT: (C)2010,JPO&INPIT |
