| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a wafer provided with a good epitaxial layer, which is grown on a substrate of a different lattice, and to provide a method of manufacturing the same. <P>SOLUTION: The present invention relates to the method of manufacturing the wafer in which a substrate of a single crystalline first material is an on-axis silicon substrate, and a second material is grown on the on-axis silicon substrate. The second material is epitaxially grown on the first material, and has a different lattice from that of the first material. The on-axis silicon substrate is polished in a polishing step 104 to increase wafer surface roughness. An inclined buffer layer and relaxing layer as SiGe layers are formed on the wafer, and then CMP final polishing 108 is conducted. By the above described method, the second material is grown before final surface finishing of the substrate. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
