FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a field effect transistor having low on resistance and a high breakdown voltage and channel mobility, and to provide a method of manufacturing the field effect transistor.

SOLUTION: The field effect transistor has a MOS structure and includes a nitride-based compound semiconductor. The field effect transistor has: a semiconductor layer that is formed on a substrate and has a prescribed conductivity type; a contact layer that is formed between the semiconductor layer, and source and drain electrodes by epitaxial growth and has a conductivity type opposite to the prescribed one; and a field relaxing layer that is formed between a contact layer at the side of the drain electrode and the semiconductor layer by epitaxial growth while the field relaxing layer is superposed on the gate electrode via a gate insulation film, and has a conductivity type opposite to the prescribed one and a carrier concentration lower than that of the contact layer.

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