发明名称 |
Non-volatile memory device and method of manufacturing same |
摘要 |
A non-volatile memory device and a method of manufacturing the non-volatile memory device are provided. At least one first semiconductor layer and at least one second semiconductor layer are disposed. At least one control gate electrode is disposed between the at least one first semiconductor layer and the at least one second semiconductor layer. At least one first layer selection line is capacitively coupled to the at least one first semiconductor layer. At least one second layer selection line is capacitively coupled to the at least one second semiconductor layer.
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申请公布号 |
US2010044778(A1) |
申请公布日期 |
2010.02.25 |
申请号 |
US20090461416 |
申请日期 |
2009.08.11 |
申请人 |
SEOL KWANG-SOO;PARK YOON-DONG |
发明人 |
SEOL KWANG-SOO;PARK YOON-DONG |
分类号 |
H01L29/792;H01L21/20;H01L21/28 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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