ION IMPLANTING DEVICE HAVING TEMPERATURE CONTROL MECHANISM, AND MANUFACTURING METHOD OF SIMOX WAFER

摘要

PROBLEM TO BE SOLVED: To provide a device and a method, capable of manufacturing SIMOX wafers with little variations in BOX film thicknesses or the like. SOLUTION: The ion implanting device is of a batch system in which a plurality of revolving wafers are heated in a vacuumed device to implant oxygen ion. It is provided with an infrared thermometer arranged at an atmospheric pressure side for measuring temperature of the plurality of revolving wafers and a window made of BaF2or ZnSe for measuring temperature of the wafers inside the vacuumed device with the infrared thermometer. The manufacturing method of the SIMOX wafers utilizes the above device. In a process of forming a first ion implanting layer, ion implantation is carried out so that temperatures of the plurality of wafers reach within a target temperature ±5°C. In a process of forming a second ion implanting layer, ion implantation is carried out so that temperatures of the plurality of wafers reach within a target temperature ±5°C. Measurement of the wafer temperatures in the processes of forming the first ion implanting layer as well as the second ion implanting layer is carried out with the infrared thermometer of the above device. COPYRIGHT: (C)2010,JPO&INPIT