COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM WITH ONIUM GROUP

摘要

Provided is a composition for forming a resist underlayer film for lithography to form a resist underlayer film that can be used as a hard mask, can be used as an anti-reflective film, and has a higher dry-etching rate than a resist without intermixing with the resist. Specifically provided is a film-forming composition that comprises a silane compound with an onium group. The silane compound with an onium group is a film-forming composition that is a hydrolysable organosilane having an onium group in the molecule, hydrolysate thereof, or hydrolytic condensate thereof. The film-forming composition is a composition for forming a resist underlayer film for lithography and is a composition comprising a silane compound with an onium group and a silane compound without an onium group. The silane compound with an onium group is present in proportions of less than 1 mole%, for example, 0.01 to 0.95 mole% in the total silane compounds. The hydrolysable organosilane is represented by formula (1): R1 aR2 bSi(R3)4-(a+b) Resist underlayer films obtained by coating and baking the composition for forming resist underlayer film on a semiconductor substrate.