| 摘要 |
THE PRESENT INVENTION RELATES TO THE USE OF TERNARY NICKEL-CONTAINING METAL ALLOYS OF THE NIMR TYPE (WHERE M = MO, W, RE OR CR, AND R = B OR P) DEPOSITED BY AN ELECTROLESS PROCESS IN SEMICONDUCTOR TECHNOLOGY. IN PARTICULAR, THE PRESENT INVENTION RELATES TO THE USE OF THESE DEPOSITED TERNARY NICKEL-CONTAINING METAL ALLOYS AS BARRIER MATERIAL OR AS SELECTIVE ENCAPSULATION MATERIAL FOR PREVENTING THE DIFFUSION AND ELECTROMIGRATION OF COPPER IN SEMICONDUCTOR COMPONENTS. |
