METHOD FOR PRODUCING MATERIAL LAYER IN SEMICONDUCTOR BODY

摘要

<P>PROBLEM TO BE SOLVED: To provide a method for producing an extremely thin foreign material layer extending deep in a semiconductor body. Ž<P>SOLUTION: The method for producing a semiconductor element having the foreign material layer disposed in the semiconductor body includes the steps of: producing a trench having two opposite sidewalls and a bottom in the semiconductor body; producing the foreign material layer on a first one of the two sidewalls of the trench; and filling the trench by epitaxially depositing a semiconductor material onto the second one of the two sidewalls and the bottom of the trench. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž