| 摘要 |
A thin film transistor is formed by laminating a gate electrode 3, a gate insulating film(4), a channel layer(5), and source/drain layers(7),(8) on a substrate(2) in this order or in a reversed order thereof. The thin film transistor is characterized in that the source/drain layers(7), (8) contain impurities having a concentration gradient such that a concentration becomes lower toward the channel layer(5). The thin film transistor which can increase an on/off ratio, manufacture method thereof, and a display device are provided.
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