| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that is increased in threshold voltage while suppressing a decrease in ON current, to provide an electronic component, and to provide a method of manufacturing the semiconductor device. Ž<P>SOLUTION: The semiconductor device includes an HV transistor 10 formed on a semiconductor substrate 1, and the HV transistor 10 includes a gate electrode 19 formed on the semiconductor substrate 1 with an insulating film interposed, and a source 15 and a drain 13, the inside of the gate electrode 19 being depleted when a voltage is applied to the gate electrode 19 and a current flows between the source 15 and drain 13. With this configuration, the gate electrode 19 has capacity through the depletion and the capacity is connected to the capacity of a gate insulating film in series. Consequently, the capacity of the gate insulating film substantially decreases and then the threshold voltage of the HV transistor 10 is therefore raised. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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