SEMICONDUCTOR DEVICE AND POWER CONVERTING DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device that can secure a low noise characteristic and reduce a loss of a switch without increasing a conduction loss of an IGBT.

SOLUTION: The semiconductor device is of a trench-gate type, and drift n-layers 110 are exposed over between floating p layers 126 and a trench gate. Namely, the floating p layers 126 are formed among the drift n-layers 110, and separated from the trench gate.

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